Geometry-Aware Single-Event Enabled Compact Models for Sub-50 nm Partially Depleted Silicon-on-Insulator Technologies

Author

Kauppila, Jeffrey S. ; Massengill, Lloyd W. ; Ball, Dennis R. ; Alles, Michael L. ; Schrimpf, Ronald D. ; Loveless, T. Daniel ; Maharrey, Jeffrey A. ; Quinn, Rachel C. ; Rowe, Jason D.

Author_Institution

Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

Volume

62

Issue

4

fYear

2015

fDate

Aug. 2015

Firstpage

1589

Lastpage

1598

Abstract

A new geometry-aware single-event enabled compact model for sub-50 nm partially depleted silicon-on-insulator MOSFETs is presented. The model extends the bias-dependent single-event modeling methods with an integrated parasitic BJT using the SPICE Gummel Poon equations and parameters derived from the manufacturer´s process design kit, physical layout, and technology information. The model compares well with TCAD and test data.

Keywords

MOSFET; radiation hardening (electronics); semiconductor device models; silicon-on-insulator; SPICE Gummel Poon equations; TCAD; geometry-aware single-event enabled compact models; integrated parasitic BJT; partially depleted silicon-on-insulator technology; silicon-on-insulator MOSFET; single-event modeling methods; Data models; Integrated circuit modeling; Junctions; MOSFET; Mathematical model; SPICE; Solid modeling; Behavioral model; CMOS integrated circuits; MOSFET; circuit simulation; compact model; radiation effects; silicon-on-insulator; single-event transient; spice;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2015.2443116

Filename

7164341