• DocumentCode
    2227722
  • Title

    A germanium-on-silicon laser for on-chip applications

  • Author

    Michel, Jurgen ; Liu, Jifeng ; Kimerling, Lionel C. ; Camacho-Aguilera, Rodolfo ; Bessette, Jonathan T. ; Cai, Yan

  • Author_Institution
    Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Lasing from Ge was achieved by highly n-type doping and biaxially tensile strain to overcome free carrier absorption. High n-type doping and efficient carrier injection remain the most important issues for electrical excitation of lasing.
  • Keywords
    elemental semiconductors; germanium; laser beam applications; silicon; Ge; Si; biaxially tensile strain; electrical excitation; germanium-on-silicon laser; n-type doping; on-chip applications; Doping; Laser excitation; Laser modes; Photonics; Pump lasers; Semiconductor lasers; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2227722