Influence of the built-in peripheral electric field on current and voltage sensitivity of PT (photoelectric transducers) on the basis of metal-semiconductor contacts

It was shown that the built-in electric field, formed by contact periphery, influences greatly on the effectiveness of photoelectric transducers (PT) made on the basis of metal-semiconductor (M-S) contacts. Enhancement of this field results in increasing voltage sensitivity on >;50% and current sensitivity on more than 50 times of these PT´s. As a result a physical model of electric field distribution in M-S contacts was suggested, considering the built-in peripheral electric field, which accounts for increasing barrier conductivity under the influence of photoelectromotive force.