• DocumentCode
    2227771
  • Title

    Optical gain in GaInNAs and GaInNAsSb quantum wells

  • Author

    Ferguson, J.W. ; Blood, P. ; Smowton, P.M. ; Bae, H. ; Sarmiento, T. ; Harris, J.S., Jr. ; Tansu, Nelson ; Mawst, Luke J.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Experiments show that 1.55 μm GalnNAsSb wells have improved gain -radiative current characteristics over 1.3 μm GalnNAs, one contributory factor being reduction in inhomogeneous broadening, raising the question whether Sb could bring benefits for 1.3 μm devices.
  • Keywords
    III-V semiconductors; amplification; gallium compounds; indium compounds; optical materials; quantum well lasers; spectral line broadening; GaInNAs; GaInNAsSb; gain-radiative current characteristics; inhomogeneous broadening; optical gain; quantum well; wavelength 1.3 mum; wavelength 1.55 mum; Absorption; Current density; Gain measurement; Materials; Photonics; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2227771