Title :
Use of self-aligned technology in GaAs diode fabrication
Author :
Yunusov, I.V. ; Gavrilova, A.M. ; Arykov, Vadim S.
Author_Institution :
Res. & Production Co. Micran, Tomsk, Russia
Abstract :
The technology of quasi-vertical diodes which allows improving diode parameters is developed. The main feature of this technology is use of self-aligned principle in diode base and ohmic contact production. The results of experiment show that self-aligned technology has advantages in fabrication and improves diode´s series resistance, reverse leakage current and ideality factor.
Keywords :
III-V semiconductors; gallium arsenide; ohmic contacts; semiconductor diodes; GaAs; diode fabrication; diode parameters; ideality factor; ohmic contact production; quasivertical diodes; reverse leakage current; self-aligned technology; series resistance; Anodes; Fabrication; Gallium arsenide; Gold; Nickel; Schottky diodes;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
