Influence of drain-to-source channel linear measurements of the gallium arsenide MEFSET on its static volt-ampere characteristics (effect of lateral dimensions)

The lateral dimension effect of GaAs channel epitaxial layers of drain-to-source (D-S) MEFSET appears depending on resistivity ρ(l, d) of its linear dimensions: length l and width d. Depending on the manufacturing technology for the specified length l, every material is characterized with its optimal width of d channel, when a minimum carrier scattering is observed, which influences greatly on MEFSET instrument characteristics: increasing of noise ratio. Considering the used epitaxial GaAs structures, the maximum drain current at minimum electron scattering is achieved for l=5 microns at d=100 microns. In case when l>;<;5 microns, it causes the appearance of negative differential resistance regions in D-S VAC, and when d>;150 microns D-S VAC become saturated.