DocumentCode :
2227884
Title :
MOSFET parameters extraction in VDSM ULSI CAD with a parallel-programming strategy
Author :
Jiang, Min ; Yang, Bin ; Zhang, Liang ; Ji, Lijiu ; Wang, Yangyuan
Author_Institution :
Peking Univ., Beijing, China
fYear :
2001
fDate :
2001
Firstpage :
673
Lastpage :
676
Abstract :
In this paper, we develop an efficient optimization algorithm for MOSFET parameter extraction in VDSM ULSI circuit design, which combines a search-space smoothing strategy, smoothes a large number of local barriers and makes conventional heuristic searching much more efficient. The experiment was implemented with a parallel programming strategy on a distributed multi-computer system with improved computing efficiency. With such an algorithm, we can obtain global solutions much more easily and more accurately than conventional searching algorithms, and parameter extraction automation can make it possible to synthesize simple analog circuits with a small number of transistors
Keywords :
MOSFET; ULSI; analogue integrated circuits; circuit CAD; circuit optimisation; integrated circuit design; multiprocessing systems; parallel programming; search problems; MOSFET parameters extraction; VDSM ULSI CAD; analog circuit synthesis; distributed multi-computer system; local barrier smoothing; optimization algorithm; parallel-programming strategy; parameter extraction automation; search-space smoothing strategy; Circuit synthesis; Concurrent computing; Design automation; Design optimization; Distributed computing; MOSFET circuits; Parallel programming; Parameter extraction; Smoothing methods; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
Type :
conf
DOI :
10.1109/ICASIC.2001.982653
Filename :
982653
Link To Document :
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