MOSFET parameters extraction in VDSM ULSI CAD with a parallel-programming strategy

Author

Jiang, Min ; Yang, Bin ; Zhang, Liang ; Ji, Lijiu ; Wang, Yangyuan

Author_Institution

Peking Univ., Beijing, China

fYear

2001

fDate

2001

Firstpage

673

Lastpage

676

Abstract

In this paper, we develop an efficient optimization algorithm for MOSFET parameter extraction in VDSM ULSI circuit design, which combines a search-space smoothing strategy, smoothes a large number of local barriers and makes conventional heuristic searching much more efficient. The experiment was implemented with a parallel programming strategy on a distributed multi-computer system with improved computing efficiency. With such an algorithm, we can obtain global solutions much more easily and more accurately than conventional searching algorithms, and parameter extraction automation can make it possible to synthesize simple analog circuits with a small number of transistors

Keywords

MOSFET; ULSI; analogue integrated circuits; circuit CAD; circuit optimisation; integrated circuit design; multiprocessing systems; parallel programming; search problems; MOSFET parameters extraction; VDSM ULSI CAD; analog circuit synthesis; distributed multi-computer system; local barrier smoothing; optimization algorithm; parallel-programming strategy; parameter extraction automation; search-space smoothing strategy; Circuit synthesis; Concurrent computing; Design automation; Design optimization; Distributed computing; MOSFET circuits; Parallel programming; Parameter extraction; Smoothing methods; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2001. Proceedings. 4th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6677-8

Type

conf

DOI

10.1109/ICASIC.2001.982653

Filename

982653