Coupling computation of the BEM and FDM in 3D capacitance extraction

Author

Wei, Hongchuan ; Wang, Guanhui ; Wang, Zeyi

Author_Institution

Dept. of Comput. Sci. & Technol., Tsinghua Univ., Beijing, China

fYear

2001

fDate

2001

Firstpage

716

Lastpage

719

Abstract

When using the boundary element method (BEM) to calculate the capacitance of three-dimensional VLSI interconnects with multiple dielectrics, a significant error can occur if some dielectrics do not contain a conductor. We present a new algorithm of coupling computation of BEM and the finite difference method (FDM) to resolve the problem. This algorithm still uses BEM for dielectrics which contain conductors, but employs FDM for those without. Then we couple these equations to calculate the capacitance. The numerical results indicate that this algorithm reduces calculation error greatly

Keywords

VLSI; boundary-elements methods; capacitance; error analysis; finite difference methods; integrated circuit interconnections; integrated circuit modelling; 3D capacitance extraction; BEM; BEM/FDM coupled computation; FDM; boundary element method; finite difference method; multiple dielectrics; numerical results; reduced calculation error; three-dimensional VLSI interconnects; Computer science; Conductors; Dielectrics; Electronic design automation and methodology; Finite difference methods; Integral equations; Integrated circuit interconnections; Mesh generation; Parasitic capacitance; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2001. Proceedings. 4th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6677-8

Type

conf

DOI

10.1109/ICASIC.2001.982664

Filename

982664