DocumentCode
2228170
Title
A high-efficiency HBT cellular power amplifier with integrated matching networks
Author
Der-Woei Wu
Author_Institution
Corporate R&D, MIA-COM Inc., Lowell, MA, USA
Volume
2
fYear
1996
fDate
17-21 June 1996
Firstpage
767
Abstract
The design, modeling, and characterization of an HBT cellular power amplifier using M/A-COM´s glass-based technology is presented. The power amplifier features a single positive supply with fully integrated on-chip input and on-chip output matching circuits. The amplifier exhibited greater than 62% PAE for a collector voltage from 3 to 6 V at 830 MHz operating frequency, which is a record-high PAE using an integrated matching network with a single positive supply.
Keywords
UHF power amplifiers; bipolar analogue integrated circuits; cellular radio; heterojunction bipolar transistors; impedance matching; land mobile radio; 3 to 6 V; 62 percent; 830 MHz; HBT cellular power amplifier; M/A-COM glass-based technology; integrated matching network; power added efficiency; single positive supply; Cellular networks; Circuits; Glass; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; Power amplifiers; Power generation; Spirals; Thin film inductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.511051
Filename
511051
Link To Document