DocumentCode :
2228174
Title :
Electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) film compositions — Functional elements of thermoelectrics
Author :
Makogon, Y.N. ; Albrecht, Martin ; Beddies, G. ; Pavlova, Elmira P. ; Sidorenko, S.I. ; Daniel, Morris ; Verbitska, T.I. ; Shkarban, P.A.
Author_Institution :
Nat. Tech. Univ. of Ukraine “KPI”, Kiev, Ukraine
fYear :
2011
fDate :
12-16 Sept. 2011
Firstpage :
739
Lastpage :
740
Abstract :
This paper is devoted to the study of the effect of deposition conditions and heat treatment on the structure and the phase composition and electroconductive properties of nanodimensional CoSbx(30 nm)/SiO2(100 nm)/Si(001) (where x = 3; 3.5) film compositions (NFC´s). The resistance dependence on temperature of NFC´s under investigation depends on the phase composition of a film and has a semiconductor character.
Keywords :
cobalt compounds; electrical conductivity; electrical resistivity; heat treatment; nanofabrication; nanostructured materials; silicon compounds; thermoelectricity; thin films; CoSbx-SiO2; Si; deposition property; electroconductive properties; film compositions; heat treatment; nanodimensional sample; resistance; size 100 nm; size 30 nm; structural property; thermoelectricity; Cooling; Films; Heating; Resistance; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
Type :
conf
Filename :
6069131
Link To Document :
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