Title :
A novel technique for behavioral modeling of the second generation switched-current building block circuits
Author :
Zeng, X. ; Wang, W. ; Shi, J.L. ; Tang, P.S.
Author_Institution :
Microelectron. Dept., Fudan Univ., Shanghai, China
Abstract :
The proposed models are capable of capturing not only the ideal behavior of switched-current circuits, but also the non-ideal behavior, which includes the charge injection effect, device mismatch effect, and finite output conductance effect. In order to evaluate the accuracy of these models, a time domain behavioral simulator SIsim is developed, in which high-order effects of errors are considered. Compared with the traditional simulator SPICE, the behavioral modeling error of SIsim is less than 1.0% while the behavioral simulation speed is 3 to 4 orders higher in time-domain
Keywords :
analogue circuits; charge injection; circuit simulation; mixed analogue-digital integrated circuits; switched capacitor networks; time-domain analysis; SIsim; analog behavioral simulation; analog circuit design; analog digital mixed electronic systems; behavioral modeling; behavioral simulation speed; charge injection effect; device mismatch effect; finite output conductance effect; ideal behavior; mixed-signal design; modeling error; nonideal behavior; second generation switched-current building block circuits; time domain behavioral simulator; Analog circuits; Circuit simulation; Degradation; Microelectronics; SPICE; Signal design; Switches; Switching circuits; Time domain analysis; Very large scale integration;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982666
