Title :
A super low-noise ion-implanted planar GaAs MESFET MMIC amplifier
Author :
Sawai, T. ; Nishida, M. ; Hirai, T. ; Honda, K. ; Yamaguchi, T. ; Murai, S. ; Harada, Y.
Author_Institution :
Microelectron. Res. Centre, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
In order to develop an ultra-compact and super low-noise MMIC amplifier for the receiving system of PHS, the input and output impedance of an ion-implanted planar GaAs MESFET were successfully reduced while maintaining its high-gain and low-noise characteristics. The MMIC had a noise figure of 1 dB and a gain of 13.5 dB at 3 V, 20 mA and 1.9 GHz in an ultra-compact plastic package. The fabricated switch and LNA module employing this MMIC has achieved the low-noise property of less than 3 dB.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; UHF amplifiers; UHF integrated circuits; field effect MMIC; gallium arsenide; integrated circuit noise; integrated circuit packaging; ion implantation; plastic packaging; 1 dB; 1.9 GHz; 13.5 dB; 20 mA; 3 V; GaAs; LNA module; PHS application; Personal Handy-phone System; UHF; ion-implanted device; low-noise characteristics; planar MESFET MMIC amplifier; super low-noise operation; ultra-compact plastic package; Circuits; Gallium arsenide; Impedance; Low-noise amplifiers; MESFETs; MMICs; Noise figure; Packaging; Plastics; Switches;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511061
