Resistive switching characteristics in printed Cu/CuO/(AgO)/Ag memristors

A resistive switching behaviour of printed, flexible Cu/CuO/(AgO)/Ag memristor devices is demonstrated for the first time. It is suggested that the high resistance state and low resistance state of bipolar resistive switching behaviour are governed by the migration of oxygen between the copper oxide and silver oxide layers. The devices have characteristics of inexpensive low-temperature fabrication, low-power operation and no required electroforming process. Ink-jet printing was used to fabricate the devices on polymer substrates. Since these devices are fabricated on flexible polyimide, they have compatibility with flexible electronic technologies.