Title :
Extraction efficiency improvement of GaN light-emitting diode using sub-wavelength nanoimprinted patterns on sapphire substrate
Author :
Chen, Hao ; Wang, Chao ; Chou, Stephen Y.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., Princeton, NJ, USA
Abstract :
The sapphire substrate with sub-wavelength pattern pitch (200 nm) was fabricated by nanoimprint and has significantly enhanced the extraction efficiency of GaN LED (λ=450 nm) - 80% more light out than the LEDs on flat sapphire substrate that grown in the same run and better than previously-reported micro-scale patterns.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; nanolithography; optical fabrication; wide band gap semiconductors; Al2O3; GaN; LED; extraction efficiency; flat sapphire substrate; light-emitting diode; size 200 nm; sub-wavelength nanoimprinted patterns; wavelength 450 nm; Fabrication; Feature extraction; Gallium nitride; Light emitting diodes; Nanolithography; Substrates; Wet etching;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
