Title :
Characteristics of MOS-transistor on basis of silicon-carbon nanotube
Author_Institution :
Zaporozhye Nat. Tech. Univ., Zaporozhye, Ukraine
Abstract :
The MOS transistor model on the basis of silicon-carbon nanotube (SiCNT) has been designed. The nanotube has been used as the semiconductor channel of model of the transistor. It has indices (6.0) and width of a bandgap 0.7 eV. The silicon dioxide (SiO2) layer by thickness of 2.2 nm has been used as the undergate insulator. In calculations of characteristics of the transistor a method of the self-consistent field of electrical potential and the step density of quantum states have been used.
Keywords :
MOSFET; carbon nanotubes; elemental semiconductors; silicon; silicon compounds; MOS transistor model; Si; electrical potential; semiconductor channel; silicon carbon nanotube; silicon dioxide layer; size 2.2 nm; step density; tum states; undergate insulator; Carbon nanotubes; Logic gates; MOSFET circuits; Silicon carbide; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
