Title :
High-power, high-efficiency cell design for 26 GHz HBT power amplifier
Author :
Tanaka, S. ; Murakami, S. ; Amamiya, Y. ; Shimawaki, H. ; Furuhata, N. ; Goto, N. ; Honjo, K. ; Ishida, Y. ; Saito, Y. ; Yamamoto, K. ; Yajima, M. ; Temino, R. ; Hisada, Y.
Author_Institution :
Microelectron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We describe a 6-chip combination HBT power amplifier and a single-cell chip with excellent power-added efficiency (PAE) and power density at 24-26 GHz. The power amplifier, based on our conventional chip design, exhibited 2.2 W output power with 19% PAE and 5 dB linear gain. To further improve the efficiency and power-density, various types of HBT cells were characterized. The optimum cell (184 /spl mu/m/sup 2/) exhibited 740 mW output power equivalent to power density of 4.0 mW//spl mu/m2, while a record high PAE of 42% was obtained. These results compare well with the best data reported at lower frequency bands (<18 GHz), thereby showing great potential for high-power, high-efficiency HBTs in near MM-wave bands.
Keywords :
MMIC power amplifiers; bipolar MMIC; microwave power amplifiers; 19 percent; 2.2 W; 24 to 26 GHz; 42 percent; 5 dB; 6-chip combination; 740 mW; HBT power amplifier; high-efficiency cell design; high-power cell design; single-cell chip; Contact resistance; Fixtures; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; National electric code; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511069
