Title :
Challenges in RF analog integrated circuits
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The recent aggressive downsizing of CMOS devices makes it potential to implement RF front-end in the CMOS process, but RF circuits have some special demands which the standard digital CMOS process does not consider: low noise, high linearity, high quality passive components. These demands present the main barriers to implement the RF front-end in CMOS process and need special efforts to get good performance. This paper discusses some relevant issues to the implementations of RF front-end in CMOS process
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit noise; CMOS device; RF analog integrated circuit; RF front-end; linearity; low noise design; passive component; Acoustical engineering; Analog integrated circuits; CMOS process; Circuit noise; Inductors; Manufacturing processes; Predictive models; Radio frequency; Semiconductor device noise; Spirals;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982684
