DocumentCode
2228697
Title
Challenges in RF analog integrated circuits
Author
Bingxue, Shi
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2001
fDate
2001
Firstpage
800
Lastpage
805
Abstract
The recent aggressive downsizing of CMOS devices makes it potential to implement RF front-end in the CMOS process, but RF circuits have some special demands which the standard digital CMOS process does not consider: low noise, high linearity, high quality passive components. These demands present the main barriers to implement the RF front-end in CMOS process and need special efforts to get good performance. This paper discusses some relevant issues to the implementations of RF front-end in CMOS process
Keywords
CMOS analogue integrated circuits; integrated circuit design; integrated circuit noise; CMOS device; RF analog integrated circuit; RF front-end; linearity; low noise design; passive component; Acoustical engineering; Analog integrated circuits; CMOS process; Circuit noise; Inductors; Manufacturing processes; Predictive models; Radio frequency; Semiconductor device noise; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6677-8
Type
conf
DOI
10.1109/ICASIC.2001.982684
Filename
982684
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