Title :
Modeling of artifacts at the current-voltage characteristics of the resonant tunneling diode
Author :
Moskaliuk, V.A. ; Fedyay, A.V.
Author_Institution :
NTUU Kyiv Polytech. Inst., Kiev, Ukraine
Abstract :
The method of accounting of artifacts at I-V characteristics of a resonant tunneling diode (RTD) was proposed within envelope function formalism. The idea of a method is to introduce a “virtual” reservoir that can emit an electron through a definite barrier to the emitter quantum well (EQW), from which electrons can tunnel through the main quantum well (MQW) through the whole quantum region.
Keywords :
quantum wells; resonant tunnelling diodes; I-V characteristics; current-voltage characteristics; emitter quantum well; envelope function formalism; main quantum well; resonant tunneling diode; virtual reservoir; Data models; Electronic mail; Energy states; Oscillators; Quantum well devices; Reservoirs; Resonant tunneling devices;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
