Title :
Coherent acoustic phonons in InGaN multiple quantum wells
Author :
Ozgur, U. ; Neogi, A. ; Lee, C.-W. ; Everitt, H.O.
Author_Institution :
Dept. of Phys., Duke Univ., Durham, NC, USA
Abstract :
Summary form only given. Coherent bulk and zone folded longitudinal acoustic phonons were generated in InGaN MQWs using impulsive optical techniques. It was observed that the frequency of the oscillations was changed by the changing quantum well period. The bulk phonon transport in the MQW region and reflection from the surface were measured.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; interface phonons; semiconductor quantum wells; surface phonons; time resolved spectra; wide band gap semiconductors; Fourier transforms; InGaN; bulk phonon transport; coherent acoustic phonons; low frequency oscillation; multiple quantum well structures; quantum well depth; round trip distance; surface/air interface; time-resolved differential reflection; time-resolved differential transmission; zone folded longitudinal acoustic phonons; Gallium compounds; Indium compounds; Interface phenomena; Phonons; Quantum wells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031335
