Title :
A 0.18-μm CMOS LNAs with sub-2 dB NF and low power for Bluetooth applications
Author :
Min, Lin ; Yong-ming, Li ; Hong-yi, Chen
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A 2.4 GHz low noise amplifier (LNA), intended for use in a Bluetooth receiver, has been designed in a standard 0.18 μm in CMOS process. The amplifier provides a forward gain (s21) of about 25 dB with a noise figure of sub-2 dB, while consuming only 16 mW power with a 1.5 V supply. It has a good linearity, with the IIP3 equal to -8 dBm around
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; integrated circuit noise; low-power electronics; radio receivers; 0.18 micron; 1.5 V; 16 mW; 2 dB; 2.4 GHz; 25 dB; Bluetooth receiver; CMOS low noise amplifier; IIP3; RF front-end circuit; forward gain; linearity; low power design; noise figure; Bluetooth; CMOS process; Impedance matching; Low-noise amplifiers; Noise figure; Noise generators; Noise level; Noise measurement; Noise reduction; Power dissipation;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982687
