Title :
Passively Q-switched Pr:YLF laser
Author :
Savitski, V.G. ; Ranieri, I.M. ; Krysa, A.B. ; Calvez, S.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
Abstract :
We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.
Keywords :
III-V semiconductors; Q-switching; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; lithium compounds; optical pumping; optical saturable absorption; praseodymium; solid lasers; yttrium compounds; AlInGaP-GaAs; YLF:Pr; diode pumped laser; passively Q-switched laser; power 23 mW; semiconductor saturable absorber mirror; time 145 ns; wavelength 639.5 nm; Fiber lasers; Gallium nitride; Laser excitation; Power lasers; Pump lasers; Semiconductor diodes; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
