• DocumentCode
    2228848
  • Title

    Passively Q-switched Pr:YLF laser

  • Author

    Savitski, V.G. ; Ranieri, I.M. ; Krysa, A.B. ; Calvez, S.

  • Author_Institution
    Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We report passively Q-switched operation of a diode-pumped Pr:YLF laser using an AlInGaP on GaAs SEmiconductor Saturable Absorber Mirror. Q-switched pulses with 145ns duration and 23mW average output power at 639.5nm are obtained.
  • Keywords
    III-V semiconductors; Q-switching; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; lithium compounds; optical pumping; optical saturable absorption; praseodymium; solid lasers; yttrium compounds; AlInGaP-GaAs; YLF:Pr; diode pumped laser; passively Q-switched laser; power 23 mW; semiconductor saturable absorber mirror; time 145 ns; wavelength 639.5 nm; Fiber lasers; Gallium nitride; Laser excitation; Power lasers; Pump lasers; Semiconductor diodes; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2228848