DocumentCode
2229011
Title
Impact ionization effective threshold energy estimation in MOSFET with 50-nm channel length
Author
Speranskiy, D.S. ; Borzdov, A.V. ; Borzdov, V.M.
Author_Institution
Belarusian State Univ., Minsk, Belarus
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
810
Lastpage
811
Abstract
In the frame of Keldysh model the impact ionization effective threshold energy has been calculated for deep submicron silicon MOSFET by means of Monte-Carlo electron transport simulation. The possibility of the impact ionization rate description by one-parameter Keldysh model is shown.
Keywords
MOSFET; Monte Carlo methods; elemental semiconductors; impact ionisation; silicon; Monte-Carlo electron transport simulation; Si; deep submicron silicon MOSFET; impact ionization effective threshold energy estimation; impact ionization rate description; one-parameter Keldysh model; size 50 nm; Estimation; Impact ionization; MOSFET circuits; Scattering; Semiconductor process modeling; Silicon; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6069161
Link To Document