Title :
Impact ionization effective threshold energy estimation in MOSFET with 50-nm channel length
Author :
Speranskiy, D.S. ; Borzdov, A.V. ; Borzdov, V.M.
Author_Institution :
Belarusian State Univ., Minsk, Belarus
Abstract :
In the frame of Keldysh model the impact ionization effective threshold energy has been calculated for deep submicron silicon MOSFET by means of Monte-Carlo electron transport simulation. The possibility of the impact ionization rate description by one-parameter Keldysh model is shown.
Keywords :
MOSFET; Monte Carlo methods; elemental semiconductors; impact ionisation; silicon; Monte-Carlo electron transport simulation; Si; deep submicron silicon MOSFET; impact ionization effective threshold energy estimation; impact ionization rate description; one-parameter Keldysh model; size 50 nm; Estimation; Impact ionization; MOSFET circuits; Scattering; Semiconductor process modeling; Silicon; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
