Title :
Resistive switching in hafnium dioxide at thermal phase transition
Author :
Danilyuk, M.A. ; Migas, D.B. ; Danilyuk, A.L.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
The results of simulation of reversible thermal breakdown of conductive filaments (nanowires) in hafnium dioxide in metal/HfO2/metal(silicon) (MIM(S)) at phase transition in HfO2 are presented. We show that the current voltage characteristics of nanowires are characterized by 3 phases, where 2 of them are linear, and the middle one has the S-shaped form.
Keywords :
MIS structures; electrical conductivity transitions; elemental semiconductors; hafnium compounds; nanowires; silicon; switching; S-shaped form; conductive filaments; current voltage characteristics; hafnium dioxide; nanowires; resistive switching; reversible thermal breakdown; thermal phase transition; Conductivity; Current-voltage characteristics; Hafnium compounds; Heating; Nanowires;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
