DocumentCode :
2229066
Title :
An improved low power CMOS readout circuit for focal plane array
Author :
Zhongjian, Chen ; Xiaoyong, Li ; Lijiu, Ji ; Jianzhong, Han ; Songlin, Yu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2001
fDate :
2001
Firstpage :
854
Lastpage :
857
Abstract :
An improved low power CMOS snapshot readout structure called OESCA (Odd-Even Snapshot Charge Amplifier) for focal plane array (FPA) is presented in this paper. Using two low power charge amplifiers as column readout circuit (one is for the odd-row readout and the other is for the even-row), this structure not only can eliminate the influence of column bus parasitic capacitance, but also can save 15% power dissipation of the column readout stage. The pixel circuit includes only three NMOSFETs. Thus, it is very suitable for large-format small-pixel lower-power readout circuit. An experimental 64×64 OESCA chip has been fabricated with 1.2-μm Double-Poly Double-Metal (DPDM) n-well CMOS technology. The charge handling capacity is 10.37 pC with pixel size 50×50 μm2. A description of the readout circuit structure, pixel circuit, operation principle is given in detail. Both excellent simulation results and experimental results of the fabricated OESCA readout chip are presented
Keywords :
CMOS image sensors; focal planes; low-power electronics; readout electronics; 1.2 micron; NMOSFET; OESCA chip; column bus parasitic capacitance; electronic imaging system; focal plane array; low power CMOS readout circuit; odd-even snapshot charge amplifier; pixel circuit; power dissipation; CMOS technology; Circuit simulation; Clocks; High-resolution imaging; MOSFETs; Microelectronics; Power dissipation; Signal processing; Signal resolution; Switched capacitor circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
Type :
conf
DOI :
10.1109/ICASIC.2001.982698
Filename :
982698
Link To Document :
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