Title :
Levels width in triple-barrier structures in two-photon transitions
Author :
Kapralova, A.A. ; Pashkovskiy, A.B.
Author_Institution :
Fed. State Unitary Corp. R&PC “Istok”, Fryazino, Russia
Abstract :
For asymmetric triple-barrier resonant-tunneling structures with thin high barriers, the simple expressions describing resonant transitions in the large-signal high-frequency electric fields have been obtained taking into account levels width. It is shown that conditions exist for every structure, when the majority of electrons falling on the upper energy level can emit two photons and then leave the structure without any intermediate interaction. The number of regions without reflection can reach four.
Keywords :
electric fields; energy states; resonant tunnelling; two-photon processes; asymmetric triple-barrier resonant-tunneling structures; large-signal high-frequency electric fields; level width; two-photon transitions; upper energy level; Electric fields; Electronic mail; Energy states; Photonics; Reflection; Resonant tunneling devices;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1