DocumentCode
2229122
Title
High Signal-to-Noise Ratio second-order Delta-Sigma modulator
Author
Gao Hai-Xia ; Xu Yue ; Yang Yin-Tang
Author_Institution
Sch. of Microelectron., Xidian Univ., Xi´an, China
Volume
3
fYear
2010
fDate
20-22 Aug. 2010
Abstract
This paper presents a high Signal-to-Noise Ratio (SNR) second-order Delta-Sigma modulator in which the delay accumulator in traditional structure is replaced by Al-Alaoui integrator. The SNR expression of new structure is obtained through frequency domain analysis on noise transfer function. The experimental results reveal that its performance overcomes that of conventional one with lower quantization noise and 6.5% higher SNR.
Keywords
delta-sigma modulation; frequency-domain analysis; integrating circuits; secondary cells; transfer functions; Al-Alaoui integrator; delay accumulator; frequency domain analysis; noise transfer function; signal-to-noise ratio second-order delta-sigma modulator; Al-Alaoui integrator; Delta-Sigma modulator; SNR; quantization noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Computer Theory and Engineering (ICACTE), 2010 3rd International Conference on
Conference_Location
Chengdu
ISSN
2154-7491
Print_ISBN
978-1-4244-6539-2
Type
conf
DOI
10.1109/ICACTE.2010.5579572
Filename
5579572
Link To Document