Title :
Metal-semiconductor-metal photodetectors on intermediate temperature MBE grown GaAs for lightwave/millimeter-wave applications
Author :
Paolella, A. ; Tait, G. ; Cooke, P. ; Nabet, B. ; Tousley, B.
Author_Institution :
Res. Dev. & Eng. Center, US Army CECOM, Fort Monmouth, NJ, USA
Abstract :
Intermediate growth temperature (IGT) GaAs Metal-Semiconductor-Metal (MSM) photodetectors enable an optimal combination of large dynamic range and speed. In addition these devices are suitable for monolithic integration. The static and temporal response of GaAs MSMs grown by Molecular Beam Epitaxy (MBE) at 350/spl deg/C has been measured.
Keywords :
III-V semiconductors; gallium arsenide; metal-semiconductor-metal structures; millimetre wave detectors; molecular beam epitaxial growth; photodetectors; semiconductor growth; 350 C; GaAs; MBE; dynamic range; intermediate growth temperature; lightwave applications; metal-semiconductor-metal photodetector; millimeter-wave applications; monolithic integration; speed; static response; temporal response; Dark current; Dynamic range; Gallium arsenide; High speed optical techniques; Microwave devices; Molecular beam epitaxial growth; Optical sensors; Photodetectors; Temperature distribution; Testing;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511087
