Title :
Combined two-band models of resonant tunneling structures
Author :
Abramov, I.I. ; Kolomeytseva, N.V. ; Romanova, I.A. ; Klimovich, A.G.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
It was shown that a good agreement of the simulation results with the experimental data can be obtained with the use of proposed combined two-band models of resonant tunneling structures.
Keywords :
Ge-Si alloys; III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; resonant tunnelling devices; silicon; GaAs-AlAs; InAs-AlSb-GaSb-AlSb-InAs; Si-SiGe; resonant tunneling device; resonant tunneling structures; two-band models; Gallium arsenide; Integrated circuit modeling; Nanoelectronics; Silicon; Silicon germanium; Tunneling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
