DocumentCode :
2229153
Title :
The influence of oxide materials on the I-V characterictics of MOSFET´s based on carbon nanotubes
Author :
Abramov, I.I. ; Volkov, A.E.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear :
2011
fDate :
12-16 Sept. 2011
Firstpage :
826
Lastpage :
827
Abstract :
The influence of oxide materials was investigated on the current-voltage characteristics of MOSFET´s based on carbon nanotubes with a channel length of 10 nm using a simplified model. It is shown that the best characteristics would have a transistor in which HfO2 is used as a dielectric.
Keywords :
MOSFET; carbon nanotubes; C-HfO2; I-V characterictics; MOSFET; carbon nanotubes; current-voltage characteristics; dielectric material; oxide materials; size 10 nm; Aluminum oxide; Carbon nanotubes; Hafnium compounds; MOSFET circuits; Materials; Scattering; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
Type :
conf
Filename :
6069169
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2229153
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