Title :
Simulation of single-electron devices based on silicon and molecules
Author :
Abramov, I.I. ; Baranoff, A.L. ; Shcherbakova, I.Y.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Universality of the developed simulation approach of single-electron devices is shown. Good agreement with experimental data is achieved in this regard for different cases.
Keywords :
elemental semiconductors; molecular electronics; silicon; single electron devices; Si; molecules; silicon; single-electron devices; Mathematical model; Metals; Nanoelectronics; Quantization; Semiconductor device modeling; Simulation; Single electron transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
