Title :
Switching and analog performance of 0.6 volt, 20 nm effective channel length Si ASIC Dual Carrier Field Effect Transistor and three dimensional field effect transistor
Author :
Huang, C. ; Yang, Y.H. ; Huang, D.H.
Author_Institution :
China Aerosp. Corp., Beijing, China
Abstract :
Theoretical studies of switching and analog performance of 0.6 volt 20 nm effective channel length Si ASIC of Dual Carrier Field Effect Transistor and Three Dimensional Field Effect Transistors will be presented. It will be shown that these field effect transistors can be fabricated by using mature semiconductor technology for linewidth greater than 130 nm
Keywords :
elemental semiconductors; field effect transistors; mixed analogue-digital integrated circuits; 0.6 V; 20 nm; 3D FET; Si; Si ASIC; analog performance; dual carrier field effect transistor; field effect transistors; linewidth above 130 nm; semiconductor technology; switching; Application specific integrated circuits; FETs; Germanium silicon alloys; Implants; MOSFET circuits; Power supplies; Ring oscillators; Semiconductor materials; Silicon germanium; Threshold voltage;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982704
