DocumentCode
2229225
Title
Switching and analog performance of 0.6 volt, 20 nm effective channel length Si ASIC Dual Carrier Field Effect Transistor and three dimensional field effect transistor
Author
Huang, C. ; Yang, Y.H. ; Huang, D.H.
Author_Institution
China Aerosp. Corp., Beijing, China
fYear
2001
fDate
2001
Firstpage
876
Lastpage
879
Abstract
Theoretical studies of switching and analog performance of 0.6 volt 20 nm effective channel length Si ASIC of Dual Carrier Field Effect Transistor and Three Dimensional Field Effect Transistors will be presented. It will be shown that these field effect transistors can be fabricated by using mature semiconductor technology for linewidth greater than 130 nm
Keywords
elemental semiconductors; field effect transistors; mixed analogue-digital integrated circuits; 0.6 V; 20 nm; 3D FET; Si; Si ASIC; analog performance; dual carrier field effect transistor; field effect transistors; linewidth above 130 nm; semiconductor technology; switching; Application specific integrated circuits; FETs; Germanium silicon alloys; Implants; MOSFET circuits; Power supplies; Ring oscillators; Semiconductor materials; Silicon germanium; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6677-8
Type
conf
DOI
10.1109/ICASIC.2001.982704
Filename
982704
Link To Document