Surface-activating-bonding-based low-resistance Si/III-V junctions

Author

Liang, Justin ; Nishida, Shuichi ; Morimoto, Masayuki ; Shigekawa, Naoteru

Author_Institution

Dept. of Electr. Eng., Osaka City Univ., Osaka, Japan

Volume

49

Issue

13

fYear

2013

fDate

June 20 2013

Firstpage

830

Lastpage

832

Abstract

The electrical properties of pn junctions, with various semiconductor materials with different doping concentrations fabricated by using surface-activated-bonding (SAB), were investigated by measuring their current-voltage (I-V) characteristics. The I-V characteristics of p⁺-GaAs/n⁺⁺-Si, p⁺-GaAs/n⁺-Si, p⁺-Si/n⁺-Si, p⁺⁺-Si/n⁺-InGaP, and p⁺-Si/n⁺-InGaP junctions showed ohmic-like properties. The interface resistance and the resultant electrical loss decreased with increasing impurity concentration at the interface. These results demonstrate the significance of SAB for fabricating tandem solar cells.

Keywords

III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; impurity states; indium compounds; p-n heterojunctions; semiconductor doping; silicon; solar cells; GaAs-Si; SAB; Si-InGaP; Si-Si; current-voltage characteristics; doping concentrations; electrical loss; electrical properties; impurity concentration; interface resistance; low-resistance Si-III-V junctions; ohmic-like properties; pn junctions; semiconductor materials; surface activated bonding; surface-activating-bonding; tandem solar cells;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.1553

Filename

6553044