Title :
Noise behavior of a 15-GHz-AlGaAs/GaAs-HEMT-oscillator
Author :
Felgentreff, T. ; Olbrich, G.R.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Munchen, Germany
Abstract :
In this paper the noise behavior of a HEMT oscillator is analyzed theoretically and experimentally. We present a large signal equivalent circuit of the HEMT device which describes also the low and high frequency noise behavior in the considered frequency range. Calculations of oscillator phase noise using this large signal and noise model are compared with results of phase noise measurements.
Keywords :
HEMT circuits; III-V semiconductors; aluminium compounds; circuit noise; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave oscillators; phase noise; semiconductor device models; semiconductor device noise; 15 GHz; AlGaAs-GaAs; HEMT noise model; HEMT oscillator; high frequency noise; large signal equivalent circuit; low frequency noise; noise behavior; phase noise; Circuit noise; Equivalent circuits; Frequency measurement; HEMTs; Low-frequency noise; MODFETs; Noise measurement; Oscillators; Phase noise; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511181
