DocumentCode :
2229570
Title :
Influence of ionizing radiation on electric characteristics of power n-MOSFETS
Author :
Korshunov, F.P. ; Bogatyrev, Y.V. ; Belous, A.I. ; Shwedov, S.V. ; Soroka, S.A. ; Lastovsky, S.B. ; Karas, Vyacheslav Ignatevich ; Kulgachev, V.I.
Author_Institution :
Sci.-Practical Mater. Res. Centre, NAS of Belarus, Minsk, Belarus
fYear :
2011
fDate :
12-16 Sept. 2011
Firstpage :
860
Lastpage :
862
Abstract :
The results of experimental researches of radiation resistance of power n-MOSFETs at influence of gamma-irradiation Co60 are submitted.
Keywords :
cobalt; gamma-rays; power MOSFET; radiation effects; Co; electric characteristics; gamma-irradiation; ionizing radiation resistance; power n-MOSFETS; Leakage current; MOSFET circuits; MOSFETs; Radiation effects; Radiation hardening; Reliability; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
Type :
conf
Filename :
6069184
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2229570
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