Low-frequency noise behavior of InP-based HEMTs and its connection with phase noise of microwave oscillators

Author

Plana, R. ; Llopis, O. ; Verdier, J. ; Escotte, L. ; Parra, T. ; Gayral, M. ; Cappy, A. ; Graffeuil, J.

Author_Institution

CNRS, Univ. Paul Sabatier, Toulouse, France

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

943

Abstract

This paper deals with the investigation of the low-frequency (LF) noise properties of InP based HEMTs. We have found that a significant part of noise originates from the sample free surface and can be minimized by an appropriate silicon nitride passivation layer. Additional measurements suggest that 1/f noise and Lorentzian noise is generated in the AlInAs donor layer of the devices. A comparative study shows that our devices compare well with the state of the art of HEMTs devices in term of excess noise. In order to investigate the correlation between phase noise and LF noise, both residual and oscillator phase noise measurements were carried out. The obtained results compare well with the state of the art in terms of residual and phase noise performance.

Keywords

1/f noise; III-V semiconductors; circuit noise; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave oscillators; passivation; phase noise; semiconductor device noise; 1/f noise; AlInAs; AlInAs donor layer; InP; InP-based HEMTs; LF noise; Lorentzian noise; Si/sub 3/N/sub 4/; excess noise; low-frequency noise behavior; microwave oscillators; passivation layer; phase noise; HEMTs; Indium phosphide; Low-frequency noise; MODFETs; Noise generators; Noise measurement; Oscillators; Passivation; Phase noise; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511183

Filename

511183