Title :
Si based highly luminescent photonic structures
Author :
Heitmann, J. ; Yi, Linxin ; Scholz, R. ; Zacharias, M.
Author_Institution :
Max-Planck Inst. fur Mikrostrukturphysik, Halle, Germany
Abstract :
Summary form only given. We present a new process that allows the size-controlled preparation of silicon nanocrystals on 4 inch wafers with a nanocrystal density of up to 10/sup 19//cm/sup 3/ and a crystal diameter down to 1.8 nm. This process results in layered arranged Si nanocrystals with a desired nanocrystal size well passivated and separated by high quality SiO/sub 2/. The preparation based on the growth of SiO/SiO/sub 2/ superlattices is fully compatible with Si technologies and enables independent control of particle size, particle density and spatial position.
Keywords :
elemental semiconductors; nanoparticles; particle size; photoluminescence; photonic crystals; semiconductor superlattices; silicon; spectral line shift; 1.8 nm; Si; blue shift; complete oxygen passivation; layered arranged nanocrystals; light emitting structures; luminescent photonic structures; nanocrystal memory devices; nanocrystal size; nanoscaled structures; quantum confinement; room temperature photoluminescence; size controlled preparation; superlattices; thermal induced phase separation; Photoluminescence; Semiconductor superlattices; Silicon;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031380
