An E-mode GaAs FET operating as a single balanced gate mixer

Author

Camargo, E. ; Kennan, W.

Author_Institution

Fujitsu Compund Semicond. Inc., Sam Jose, CA, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

951

Abstract

The objective of this paper is to describe the design details of a semi-monolithic single balanced gate mixer for DBS applications. In order to obtain a low noise figure and high conversion gain it was decided to employ enhancement mode MESFETs, thus avoiding the need for a negative supply. The nonlinear modeling is briefly described and contributed to the success of the mixer performance. An SSB noise figure of 6.0 dB was measured from 10.7 to 11.8 GHz with a conversion gain of 7.0 dB +/- 1.0 dB, with only +3.0 dBm of LO power. The third order intercept point is equal to +13.0 dBm, adequate for LNB applications.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC mixers; equivalent circuits; field effect MMIC; gallium arsenide; integrated circuit noise; 10.7 to 11.8 GHz; 6 dB; 7 dB; DBS applications; E-mode GaAs FET; GaAs; SHF; enhancement mode MESFETs; high conversion gain; low noise figure; nonlinear modeling; single balanced gate mixer; Circuit topology; FETs; Frequency conversion; Gallium arsenide; MESFETs; MMICs; Noise figure; Radio frequency; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511185

Filename

511185