DocumentCode
2229718
Title
High power 6-18 GHz H/V switch designed in channelized wafer scale fabrication process
Author
Jain, N. ; Onno, P.
Author_Institution
Corp. R&D Center, M/A-Com. Inc., Lowell, MA, USA
Volume
2
fYear
1996
fDate
17-21 June 1996
Firstpage
955
Abstract
A 6-18 GHz transfer switch is fabricated by a batch process technology, the HMIC (Heterolithic Microwave Integrated Circuit) process using shunt silicon diodes. The fabrication and design utilized a novel transmission medium incorporating signal channelization for high frequency high performance operation.
Keywords
MMIC; antenna accessories; integrated circuit design; power semiconductor diodes; power semiconductor switches; 6 to 18 GHz; HMIC process; SHF transfer switch; Si; batch process technology; broadband antenna switch; channelized wafer scale fabrication process; heterolithic microwave integrated circuit process; high power H/V switch; shunt Si diodes; signal channelization; Diodes; Fabrication; Frequency; Integrated circuit technology; Microwave integrated circuits; Microwave technology; Signal design; Silicon; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.511186
Filename
511186
Link To Document