Title :
A Ka-band GaInP/GaAs HBT double balanced upconvert mixer using lumped element balun
Author :
Freundorfer, A.P. ; Falt, C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada
Abstract :
A Ka-band GaInP/GaAs HBT double balanced upconvert mixer has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. A conversion gain of 1 dB, and an output power of -10 dBm from 27 GHz to 30 GHz for an LO input power of 10 dBm at 26 GHz were measured. The LO isolation to the output was measured to be 20 dB. These results are the best reported at Ka-band for a mixer using transistors from digital HBT library.
Keywords :
III-V semiconductors; MMIC mixers; baluns; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 1 dB; 26 to 30 GHz; GaInP-GaAs; HBT double balanced mixer; Ka-band; local multipoint distribution systems; lumped element balun; multifunction T/R module; upconvert mixer; Circuits; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Mixers; Power generation; Power measurement; Radio frequency; Semiconductor device measurement;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.511188
