A Ka-band GaInP/GaAs HBT double balanced upconvert mixer using lumped element balun

Author

Freundorfer, A.P. ; Falt, C.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

963

Abstract

A Ka-band GaInP/GaAs HBT double balanced upconvert mixer has been designed and fabricated. This circuit is to be used in a multifunction T/R module for local multipoint distribution systems (LMDS) which include both analog and digital transmission. A conversion gain of 1 dB, and an output power of -10 dBm from 27 GHz to 30 GHz for an LO input power of 10 dBm at 26 GHz were measured. The LO isolation to the output was measured to be 20 dB. These results are the best reported at Ka-band for a mixer using transistors from digital HBT library.

Keywords

III-V semiconductors; MMIC mixers; baluns; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 1 dB; 26 to 30 GHz; GaInP-GaAs; HBT double balanced mixer; Ka-band; local multipoint distribution systems; lumped element balun; multifunction T/R module; upconvert mixer; Circuits; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Mixers; Power generation; Power measurement; Radio frequency; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511188

Filename

511188