Title :
3–4 THz InGaAs/InAlAs quantum-cascade lasers based on the indirect pump scheme
Author :
Yamanishi, Masamichi ; Fujita, Kazuue ; Yu, Nanfang ; Edamura, Tadataka ; Tanaka, Kazunori ; Capasso, Federico
Author_Institution :
Central Res. Labs., Hamamatsu Photonics KK., Hamamatsu, Japan
Abstract :
We present the operation of an indirectly pumped InGaAs/InAlAs THz quantum-cascade laser. The threshold-current-density is obtained to be low, ~470 A/cm2 at 6-25 K, with recourse to the absence of lower level pumping.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; microwave photonics; optical pumping; quantum cascade lasers; InGaAs-InAlAs; THz quantum-cascade laser; frequency 3 THz to 4 THz; indirect pump scheme; temperature 6 K to 25 K; threshold-current-density; Indium gallium arsenide; Laser excitation; Laser modes; Pump lasers; Quantum cascade lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
