DocumentCode :
2230103
Title :
A simulation study of single events in n+-p junctions
Author :
Abadir, G.B. ; Fikry, W. ; Ragai, H.F. ; Omar, O.A.
Author_Institution :
Ain Shams University
fYear :
2004
fDate :
5-7 Sept. 2004
Firstpage :
541
Lastpage :
544
Keywords :
Charge carrier density; Charge carrier lifetime; Discrete event simulation; Doping; Geometry; Mathematical model; Radiative recombination; Semiconductor process modeling; Solid modeling; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical, Electronic and Computer Engineering, 2004. ICEEC '04. 2004 International Conference on
Print_ISBN :
0-7803-8575-6
Type :
conf
DOI :
10.1109/ICEEC.2004.1374525
Filename :
1374525
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2230103
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