DocumentCode
2230103
Title
A simulation study of single events in n+-p junctions
Author
Abadir, G.B. ; Fikry, W. ; Ragai, H.F. ; Omar, O.A.
Author_Institution
Ain Shams University
fYear
2004
fDate
5-7 Sept. 2004
Firstpage
541
Lastpage
544
Keywords
Charge carrier density; Charge carrier lifetime; Discrete event simulation; Doping; Geometry; Mathematical model; Radiative recombination; Semiconductor process modeling; Solid modeling; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical, Electronic and Computer Engineering, 2004. ICEEC '04. 2004 International Conference on
Print_ISBN
0-7803-8575-6
Type
conf
DOI
10.1109/ICEEC.2004.1374525
Filename
1374525
Link To Document