• DocumentCode
    2230196
  • Title

    Behavior Modeling of Programmable Metallization Cell Using Verilog-A

  • Author

    Dimplu, Darshan Anandappa ; Wang, Fei

  • Author_Institution
    Electr. Eng. Dept., California State Univ., Long Beach, CA, USA
  • fYear
    2012
  • fDate
    16-18 April 2012
  • Firstpage
    466
  • Lastpage
    471
  • Abstract
    Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide spread flash memory, such as higher writing speed, better scalability, and longer data retention period. The unique electrical behavior of programmable metallization cell has not been included in any popular EAD tools yet. Therefore, a behavior model of Programmable Metallization Cell is designed using Verilog-A language in this paper. This model can be easily imported into PSPICE to enhance circuit level design related to programmable metallization cell.
  • Keywords
    flash memories; hardware description languages; Verilog-A; data retention period; electrical behavior; flash memory; higher writing speed; nonvolatile memory; programmable metallization cell behavior model; Analytical models; Data models; Hardware design languages; Materials; Metallization; Resistance; Threshold voltage; Non-volatile memory; Verilog-A; device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information Technology: New Generations (ITNG), 2012 Ninth International Conference on
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    978-1-4673-0798-7
  • Type

    conf

  • DOI
    10.1109/ITNG.2012.107
  • Filename
    6209196