DocumentCode
2230196
Title
Behavior Modeling of Programmable Metallization Cell Using Verilog-A
Author
Dimplu, Darshan Anandappa ; Wang, Fei
Author_Institution
Electr. Eng. Dept., California State Univ., Long Beach, CA, USA
fYear
2012
fDate
16-18 April 2012
Firstpage
466
Lastpage
471
Abstract
Programmable metallization is a promising type of non-volatile memory that displays several advantages over the currently wide spread flash memory, such as higher writing speed, better scalability, and longer data retention period. The unique electrical behavior of programmable metallization cell has not been included in any popular EAD tools yet. Therefore, a behavior model of Programmable Metallization Cell is designed using Verilog-A language in this paper. This model can be easily imported into PSPICE to enhance circuit level design related to programmable metallization cell.
Keywords
flash memories; hardware description languages; Verilog-A; data retention period; electrical behavior; flash memory; higher writing speed; nonvolatile memory; programmable metallization cell behavior model; Analytical models; Data models; Hardware design languages; Materials; Metallization; Resistance; Threshold voltage; Non-volatile memory; Verilog-A; device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Technology: New Generations (ITNG), 2012 Ninth International Conference on
Conference_Location
Las Vegas, NV
Print_ISBN
978-1-4673-0798-7
Type
conf
DOI
10.1109/ITNG.2012.107
Filename
6209196
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