Coherent nonlinear response from excitation induced shift in semiconductors

Author

Shacklette, J.M. ; Cundiff, S.T.

Author_Institution

Joint Inst. for Lab. Astrophys., Nat. Inst. of Stand. & Technol., Boulder, CO, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

267

Lastpage

268

Abstract

Summary form only given. An excitation induced shift (EIS) can result in a contribution to the transient four-wave-mixing (TFWM) signal. Experimentally, we detect the presence of EIS by spectrally resolving the TFWM signal from a strained InGaAs/GaAsP multiple quantum well. The strain increases the heavy-hole-light-hole splitting so that only the heavy hole exciton plus continuum is excited by the incident pulses.

Keywords

III-V semiconductors; excitons; gallium arsenide; indium compounds; multiwave mixing; semiconductor quantum wells; spectral line shift; visible spectra; InGaAs-GaAsP; absorption spectrum; coherent nonlinear response; excitation induced shift; heavy hole exciton; heavy-hole light-hole splitting; modified optical Bloch equations; numerical results; spectral resolution; strained InGaAs/GaAsP multiple quantum well; transient four-wave-mixing; Excitons; Gallium compounds; Indium compounds; Optical mixing; Optical spectroscopy; Quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031408

Filename

1031408