Title :
Hybrid silicon evanescent phase modulator based on carrier depletion in offset multiple-quantum-well
Author :
Chen, Hui-Wen ; Kuo, Ying-hao ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
Abstract :
We demonstrate a phase modulator based on carrier depletion on the hybrid silicon evanescent platform. The device has a modulation efficiency of 4 V mm, along with a bandwidth of 100 nm and power capability up to 20 mW.
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; elemental semiconductors; integrated optics; optical fabrication; silicon; III-V multiple-quantum-well; Mach-Zehnder interferometer; Si; carrier depletion; hybrid silicon evanescent phase modulator; modulation efficiency; power 20 mW; Bandwidth; Erbium; Gold; III-V semiconductor materials; Modulation coding; Optical modulation; Optical waveguides; Phase modulation; Quantum well devices; Silicon; (250.4410) Modulators; (250.5300) Photonic integrated circuits; (250.7360) Waveguide modulators;
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
