Title :
Ferroelectric nonvolatile memories for embedded applications
Author :
Jones, Robert E., Jr.
Author_Institution :
Dept. of Mater. Res. & Strategic Technol., Motorola Inc., Austin, TX, USA
Abstract :
Ferroelectric nonvolatile memories offer low voltage operation and fast write speeds that makes them attractive for embedded applications. The fundamentals of ferroelectric materials and ferroelectric memory operation are reviewed. Also discussed is the process integration of ferroelectric capacitors into a CMOS flow. A test circuit which embedded an 8 Kbit ferroelectric memory into a Motorola HC 11E9 microcontroller is reported
Keywords :
CMOS integrated circuits; ferroelectric capacitors; ferroelectric storage; integrated memory circuits; microcontrollers; random-access storage; 8 Kbit; CMOS process flow integration; FeRAM; Motorola HC 11E9 microcontroller; embedded applications; fast write speeds; ferroelectric capacitors; ferroelectric nonvolatile memories; low voltage operation; Capacitors; Circuit testing; Ferroelectric materials; Lattices; Low voltage; Microcontrollers; Nonvolatile memory; Personal digital assistants; Polarization; Temperature;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.695013
