DocumentCode :
2231017
Title :
Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates
Author :
Liu, Jiang ; Wei, Rusheng ; Xu, Xiangang ; Wang, Pu
Author_Institution :
Inst. of Laser Eng., Beijing Univ. of Technol., Beijing, China
fYear :
2011
fDate :
1-6 May 2011
Firstpage :
1
Lastpage :
2
Abstract :
Few-layer epitaxial graphene grown on 6H silicon carbide (SiC) wafers by thermal decomposition was used as novel saturable absorbers for mode-locking of ytterbium-doped fiber lasers, which generated 19nJ single pulse energy at 1.05MHz repetition rate.
Keywords :
epitaxial layers; fibre lasers; graphene; laser mode locking; optical saturable absorption; silicon compounds; ytterbium; C-SiC; energy 19 nJ; few layer epitaxial graphene; mode locked fiber laser; saturable absorber; thermal decomposition; Epitaxial growth; Fiber lasers; Laser mode locking; Optical fiber couplers; Optical fiber devices; Optical fiber polarization; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
Type :
conf
Filename :
5950265
Link To Document :
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