A novel phase shifter using a GaAs MESFET in passive configuration

Author

Purnell, K. ; Katz, A.

Author_Institution

Lockheed Martin Commercial Space, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

1197

Abstract

A new kind of voltage controllable phase shifter has been developed. The technique used to develop this phase shifter employs GaAs MESFETs as passive elements, similar to those used for monolithic microwave integrated circuit (MMIC) switches and attenuators. The result is a phase shifter that is smaller and that requires fewer components. A demonstration, single MESFET phase shifter was produced for the 3.7 to 4.2-GHz satellite band. This phase shifter provided near flat, voltage linear phase shifts up to 45 degrees across the design band with a maximum insertion loss of 6 dB.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; field effect MMIC; gallium arsenide; 3.7 to 4.2 GHz; 6 dB; GaAs; GaAs MESFET; MMIC; insertion loss; passive element; satellite band; voltage controllable phase shifter; Gallium arsenide; MESFET integrated circuits; MMICs; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Phase shifters; Switches; Switching circuits; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511244

Filename

511244