Title :
High-power terahertz generation due to dipole radiation within InGaN/GaN multiple quantum wells
Author :
Sun, Guan ; Xu, Guibao ; Ding, Yujie J. ; Zhao, Hongping ; Liu, Guangyu ; Zhang, Jing ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We have generated broadband THz pulses within eight periods of InGaN/GaN quantum wells due to dipole radiation following generation of spatially-separated electrons and holes. Output powers as high as 1 μW have been obtained.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical materials; optical pulse generation; semiconductor quantum wells; terahertz wave generation; wide band gap semiconductors; InGaN-GaN; broadband THz pulses; high-power terahertz generation; multiple quantum wells; spatially-separated electrons; spatially-separated holes; Fresnel reflection; Gallium nitride; Laser excitation; Nonlinear optics; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
