• DocumentCode
    2231414
  • Title

    High-frequency ultrasonic transducer arrays using ZnO thin films

  • Author

    Ito, Yu ; Kushida, K. ; Sugawara, Kenji ; Takeuchi, H.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo
  • fYear
    1993
  • fDate
    31 Oct-3 Nov 1993
  • Firstpage
    1117
  • Abstract
    The 100 MHz linear transducer arrays described here were produced by rf-magnetron sputter deposition of a 10 μm thick ZnO film onto a (111)-oriented gold film (with a chromium sublayer) vacuum-evaporated onto (0001) sapphire surface. V-shaped grooves between adjacent elements were formed by using an anisotropic etchant (HCl and HNO3-based) that preferentially etched the c-plane of ZnO. For a 32-element array, the ultrasound beam in the azimuth plane in water could be electronically focused to obtain a half-amplitude width of 60 μm at the focal depth, agreeing well with theoretical predictions
  • Keywords
    II-VI semiconductors; acoustic arrays; piezoelectric semiconductors; piezoelectric thin films; piezoelectric transducers; sputter deposition; ultrasonic transducers; zinc compounds; 100 MHz; Al2O3; Au; Au film; HCl; HNO3; V-shaped grooves; ZnO; ZnO thin films; half-amplitude width; high-frequency ultrasonic transducer arrays; rf-magnetron sputter deposition; sapphire surface; ultrasound beam; Anisotropic magnetoresistance; Chromium; Gold; Sputter etching; Sputtering; Transistors; Ultrasonic imaging; Ultrasonic transducer arrays; Ultrasonic transducers; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 1993. Proceedings., IEEE 1993
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    0-7803-2012-3
  • Type

    conf

  • DOI
    10.1109/ULTSYM.1993.339592
  • Filename
    339592