DocumentCode :
2231414
Title :
High-frequency ultrasonic transducer arrays using ZnO thin films
Author :
Ito, Yu ; Kushida, K. ; Sugawara, Kenji ; Takeuchi, H.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo
fYear :
1993
fDate :
31 Oct-3 Nov 1993
Firstpage :
1117
Abstract :
The 100 MHz linear transducer arrays described here were produced by rf-magnetron sputter deposition of a 10 μm thick ZnO film onto a (111)-oriented gold film (with a chromium sublayer) vacuum-evaporated onto (0001) sapphire surface. V-shaped grooves between adjacent elements were formed by using an anisotropic etchant (HCl and HNO3-based) that preferentially etched the c-plane of ZnO. For a 32-element array, the ultrasound beam in the azimuth plane in water could be electronically focused to obtain a half-amplitude width of 60 μm at the focal depth, agreeing well with theoretical predictions
Keywords :
II-VI semiconductors; acoustic arrays; piezoelectric semiconductors; piezoelectric thin films; piezoelectric transducers; sputter deposition; ultrasonic transducers; zinc compounds; 100 MHz; Al2O3; Au; Au film; HCl; HNO3; V-shaped grooves; ZnO; ZnO thin films; half-amplitude width; high-frequency ultrasonic transducer arrays; rf-magnetron sputter deposition; sapphire surface; ultrasound beam; Anisotropic magnetoresistance; Chromium; Gold; Sputter etching; Sputtering; Transistors; Ultrasonic imaging; Ultrasonic transducer arrays; Ultrasonic transducers; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1993. Proceedings., IEEE 1993
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-2012-3
Type :
conf
DOI :
10.1109/ULTSYM.1993.339592
Filename :
339592
Link To Document :
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