Title :
Nanolasers on Si-MOSFET: A monolithic integration
Author :
Lu, Fanglu ; Tran, Thai-Truong D. ; Ko, Wai Son ; Ng, Kar Wei ; Chen, Roger ; Chang-Hasnain, Connie J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
Abstract :
InGaAs nanopillar lasers directly grown on the gate, source and drain areas of Si MOSFET are demonstrated for the first time using 410°C MOCVD. This represents the first monolithic integration of lasers on functional transistors.
Keywords :
III-V semiconductors; MOCVD; MOSFET; gallium arsenide; indium compounds; integrated optics; nanophotonics; semiconductor lasers; InGaAs; MOCVD; Si; Si-MOSFET; functional transistors; monolithic integration; nanolasers; nanopillar lasers; temperature 410 degC; Indium gallium arsenide; Lasers; Logic gates; MOSFET circuits; Monolithic integrated circuits; Silicon; Transistors;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
