• DocumentCode
    2231571
  • Title

    Nanolasers on Si-MOSFET: A monolithic integration

  • Author

    Lu, Fanglu ; Tran, Thai-Truong D. ; Ko, Wai Son ; Ng, Kar Wei ; Chen, Roger ; Chang-Hasnain, Connie J.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    InGaAs nanopillar lasers directly grown on the gate, source and drain areas of Si MOSFET are demonstrated for the first time using 410°C MOCVD. This represents the first monolithic integration of lasers on functional transistors.
  • Keywords
    III-V semiconductors; MOCVD; MOSFET; gallium arsenide; indium compounds; integrated optics; nanophotonics; semiconductor lasers; InGaAs; MOCVD; Si; Si-MOSFET; functional transistors; monolithic integration; nanolasers; nanopillar lasers; temperature 410 degC; Indium gallium arsenide; Lasers; Logic gates; MOSFET circuits; Monolithic integrated circuits; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2231571